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FLU35XM

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FLU35XM Image

The FLU35XM from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 2 GHz, Power 34.5 to 35.5 dBm, Power(W) 2.82 to 3.55 W, P1dB 34.5 to 35.5 dBm, Power Gain (Gp) 11.5 to 12.5 dB. Tags: Surface Mount. More details for FLU35XM can be seen below.

Product Specifications

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Product Details

  • Part Number
    FLU35XM
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs FET from 2 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Type
    L-Band
  • Application
    L Band
  • Frequency
    2 GHz
  • Power
    34.5 to 35.5 dBm
  • Power(W)
    2.82 to 3.55 W
  • P1dB
    34.5 to 35.5 dBm
  • Power Gain (Gp)
    11.5 to 12.5 dB
  • Power Added Effeciency
    0.46
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    1200 to 1800 mA
  • Thermal Resistance
    7.5 to 10 Degree C/W
  • Package Type
    Surface Mount
  • Package
    XM
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Pinch Off Voltage : -3.5 to -1 V, Channel Temperature : 175 Degree C

Technical Documents
View details on the manufacturer's website
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