1. everything RF
  2. RF Components
  3. Transistors
  4. Transistors
  5. Sumitomo Electric Device Innovations
  6. FLU35ZME1

FLU35ZME1

Download Datasheet
Request Quote

Note : Your request will be directed to Sumitomo Electric Device Innovations.

FLU35ZME1 Image

The FLU35ZME1 from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 2 GHz, Power 34.5 to 35.5 dBm, Power(W) 2.82 to 3.55 W, P1dB 34.5 to 35.5 dBm, Power Gain (Gp) 10.5 to 11.5 dB. Tags: Surface Mount. More details for FLU35ZME1 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FLU35ZME1
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs FET from 2 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Industry
    Wireless Infrastructure
  • Application Type
    L-Band, Base Station
  • Application
    L Band, Base Station
  • Frequency
    2 GHz
  • Power
    34.5 to 35.5 dBm
  • Power(W)
    2.82 to 3.55 W
  • P1dB
    34.5 to 35.5 dBm
  • Power Gain (Gp)
    10.5 to 11.5 dB
  • Class
    III
  • Supply Voltage
    10 V
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    1200 to 1800 mA
  • Thermal Resistance
    5 to 6 Degree C/W
  • Package Type
    Surface Mount
  • Package
    ZM
  • RoHS
    Yes
  • Storage Temperature
    -55 to 150 Degree C
  • Note
    Pinch Off Voltage : -3.5 to -1 V, Forward Gate Current : 19.4 mA, Reverse Gate Current : -2 mA, Gate Resistance : 100 Ohm, Channel Temperature : 145 Degree C

Technical Documents
View details on the manufacturer's website
View similar products