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The FLX257XV from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 10 GHz, Power 33.5 dBm, Power(W) 2.24 W, P1dB 33.5 dBm, Power Gain (Gp) 7.5 dB. Tags: Die. More details for FLX257XV can be seen below.

Product Specifications

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Product Details

  • Part Number
    FLX257XV
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs FET from 10 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Type
    X-Band
  • Application
    X Band
  • Frequency
    10 GHz
  • Power
    33.5 dBm
  • Power(W)
    2.24 W
  • P1dB
    33.5 dBm
  • Power Gain (Gp)
    7.5 dB
  • Package Type
    Die
  • Operating Temperature
    25 Degree C