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The FLX257XV from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 10 GHz, Power 33.5 dBm, Power(W) 2.24 W, P1dB 33.5 dBm, Power Gain (Gp) 7.5 dB. Tags: Die. More details for FLX257XV can be seen below.
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
300 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz
400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz
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