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FSX017LG

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The FSX017LG from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 12 GHz, Power 16 dBm, Power(W) 0.039 W, P1dB 16 dBm, Power Gain (Gp) 7 to 8 dB. Tags: Flanged. More details for FSX017LG can be seen below.

Product Specifications

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Product Details

  • Part Number
    FSX017LG
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs FET from 12 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application
    General Purpose
  • Frequency
    12 GHz
  • Power
    16 dBm
  • Power(W)
    0.039 W
  • P1dB
    16 dBm
  • Power Gain (Gp)
    7 to 8 dB
  • Transconductance
    50 mS
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Power Dissipation (Pdiss)
    220 mW
  • Thermal Resistance
    300 to 400 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Saturated Drain Current : 35 to 75 mA, Gate Source Breakdown Voltage : -5 V

Technical Documents
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