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FSX027WF

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The FSX027WF from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 8 GHz, Power 23.5 to 24.5 dBm, Power(W) 0.22 to 0.28 W, Power Gain (Gp) 6.5 to 14 dB, Noise Figure 2.5 dB. Tags: Ceramic. More details for FSX027WF can be seen below.

Product Specifications

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Product Details

  • Part Number
    FSX027WF
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs FET from 8 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Type
    General Purpose
  • Application
    General Purpose
  • Frequency
    8 GHz
  • Power
    23.5 to 24.5 dBm
  • Power(W)
    0.22 to 0.28 W
  • Power Gain (Gp)
    6.5 to 14 dB
  • Noise Figure
    2.5 dB
  • Transconductance
    100 ms
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Power Dissipation (Pdiss)
    1.5 W
  • Thermal Resistance
    70 to 100 Degree C/W
  • Package Type
    Ceramic
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Saturated Drain Current : 70 to 150 mA, Gate Source Breakdown Voltage : -5 V

Technical Documents
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