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SGC8598-100A-R

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The SGC8598-100A-R from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 8.5 to 9.8 GHz, Power 551 dBm, Power(W) 100 to 125.89 W, Power Gain (Gp) 9 to 10 dB, Power Added Effeciency 0.4. Tags: Flanged. More details for SGC8598-100A-R can be seen below.

Product Specifications

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Product Details

  • Part Number
    SGC8598-100A-R
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaN on SiC, GaN HEMT from 8.5 to 9.8 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar, Wireless Infrastructure
  • Application Type
    X-Band, C-Band, Radar
  • Application
    Radar
  • CW/Pulse
    Pulse
  • Frequency
    8.5 to 9.8 GHz
  • Power
    551 dBm
  • Power(W)
    100 to 125.89 W
  • Pulsed Width
    100 usec
  • Power Gain (Gp)
    9 to 10 dB
  • Power Added Effeciency
    0.4
  • Supply Voltage
    50 V
  • Voltage - Drain-Source (Vdss)
    50 V
  • Voltage - Gate-Source (Vgs)
    -15 V
  • Drain Current
    5.7 to 7.4 A
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    1.4 to 1.8 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -55 to 125 Degree C
  • Note
    Saturated Drain Current : 11 A, Gain Flatness : 1.6 dB, Forward Gate Current : 6 mA, Reverse Gate Current : 4.5 mA

Technical Documents
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