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SGFCF10S-D

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SGFCF10S-D Image

The SGFCF10S-D from Sumitomo Electric Device Innovations is a RF Transistor with Frequency DC to 3.7 GHz, Power 38 dBm, Power(W) 6.31 W, Saturated Power 40 to 41 dBm, Power Gain (Gp) 18.5 to 19.5 dB. Tags: Surface Mount. More details for SGFCF10S-D can be seen below.

Product Specifications

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Product Details

  • Part Number
    SGFCF10S-D
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaN on SiC, GaN HEMT from DC to 3.7 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure
  • Application
    3G / WCDMA, 4G / LTE, Base Station
  • Frequency
    DC to 3.7 GHz
  • Power
    38 dBm
  • Power(W)
    6.31 W
  • Saturated Power
    40 to 41 dBm
  • Power Gain (Gp)
    18.5 to 19.5 dB
  • Supply Voltage
    50 V
  • Voltage - Drain-Source (Vdss)
    50 V
  • Voltage - Gate-Source (Vgs)
    -15 V
  • Power Dissipation (Pdiss)
    13.5 W
  • Thermal Resistance
    10 to 11.5 Degree C/W
  • Package Type
    Surface Mount
  • RoHS
    Yes
  • Storage Temperature
    -40 to 125 Degree C
  • Note
    Forward Gate Current : 23 mA, Reverse Gate Current : -0.3 mA

Technical Documents
View details on the manufacturer's website
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