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CGHV60075D5

RF Transistor by MACOM (309 more products)
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The CGHV60075D5 from MACOM is a RF Transistor with Frequency DC to 6 GHz, Power 48.75 dBm, Power(W) 74.99 W, Saturated Power 48.75 dBm, Small Signal Gain 17 dB. Tags: Die. More details for CGHV60075D5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    CGHV60075D5
  • Manufacturer
    MACOM
  • Description
    75 W, 6.0 GHz, GaN HEMT Die

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Test & Measurement, Wireless Infrastructure, Broadcast
  • Application
    Cellular, 3G / WCDMA, EDGE, CDMA, Radio
  • CW/Pulse
    Pulse, CW
  • Frequency
    DC to 6 GHz
  • Power
    48.75 dBm
  • Power(W)
    74.99 W
  • Saturated Power
    48.75 dBm
  • Small Signal Gain
    17 dB
  • VSWR
    10.00:1
  • Class
    A, AB
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Drain Efficiency
    0.6
  • Drain Current
    125 mA
  • Drain Bias Current
    8 to 10 A
  • IMD
    -30 dBc
  • Package Type
    Die
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
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