1. everything RF
  2. RF Components
  3. Transistors
  4. Transistors
  5. Sumitomo Electric Device Innovations
  6. SGK0910-120A-R

SGK0910-120A-R

Download Datasheet
Request Quote

Note : Your request will be directed to Sumitomo Electric Device Innovations.

SGK0910-120A-R Image

The SGK0910-120A-R from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 9.2 to 10 GHz, Power 551 dBm, Power(W) 100 to 125.89 W, Gain 10 to 11.5 dB, Power Added Effeciency 0.35. Tags: Flanged. More details for SGK0910-120A-R can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SGK0910-120A-R
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaN on SiC, GaN HEMT from 9.2 to 10 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar, Wireless Infrastructure
  • Application Type
    X-Band, Radar
  • Application
    X Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    9.2 to 10 GHz
  • Power
    551 dBm
  • Power(W)
    100 to 125.89 W
  • Pulsed Width
    100 usec
  • Gain
    10 to 11.5 dB
  • Power Added Effeciency
    0.35
  • Transconductance
    12.1 S
  • Supply Voltage
    24 V
  • Voltage - Drain-Source (Vdss)
    24 V
  • Voltage - Gate-Source (Vgs)
    -10 V
  • Drain Current
    11.6 to 15.1 A
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.65 to 0.85 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -55 to 125 Degree C
  • Note
    Saturated Drain Current : 26.2 A, Gain Flatness : 1 dB, Forward Gate Current : 30.4 mA, Reverse Gate Current : -12.8 mA

Technical Documents
View details on the manufacturer's website
View similar products