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SGK0910-60A-R

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SGK0910-60A-R Image

The SGK0910-60A-R from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 9.2 to 10 GHz, Power 47 to 48 dBm, Power(W) 50.12 to 63.1 W, Gain 10.5 to 11.5 dB, Power Added Effeciency 0.35. Tags: Flanged. More details for SGK0910-60A-R can be seen below.

Product Specifications

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Product Details

  • Part Number
    SGK0910-60A-R
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaN on SiC, GaN HEMT from 9.2 to 10 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar, Wireless Infrastructure
  • Application Type
    X-Band
  • Application
    X Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    9.2 to 10 GHz
  • Power
    47 to 48 dBm
  • Power(W)
    50.12 to 63.1 W
  • Pulsed Width
    100 usec
  • Gain
    10.5 to 11.5 dB
  • Power Added Effeciency
    0.35
  • Transconductance
    6.1 S
  • Supply Voltage
    24 V
  • Voltage - Drain-Source (Vdss)
    24 V
  • Voltage - Gate-Source (Vgs)
    -10 V
  • Drain Current
    5.9 to 7.7 A
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    1.1 to 1.5 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -55 to 125 Degree C
  • Note
    Saturated Drain Current : 13.1 A, Gain Flatness : 1 dB, Forward Gate Current : 15.2 mA, Reverse Gate Current : -6.4 mA

Technical Documents
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