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SGN2729-250H-R

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SGN2729-250H-R Image

The SGN2729-250H-R from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 2.7 to 2.9 GHz, Power 53.97 to 55.05 dBm, Power(W) 250 to 320 W, Power Gain (Gp) 13 to 14 dB, VSWR 10.00:1. Tags: Flanged. More details for SGN2729-250H-R can be seen below.

Product Specifications

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Product Details

  • Part Number
    SGN2729-250H-R
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaN on SiC, GaN HEMT from 2.7 to 2.9 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar, Wireless Infrastructure
  • Application Type
    S Band, Radar
  • Application
    S Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    2.7 to 2.9 GHz
  • Power
    53.97 to 55.05 dBm
  • Power(W)
    250 to 320 W
  • Pulsed Width
    120 usec
  • Power Gain (Gp)
    13 to 14 dB
  • VSWR
    10.00:1
  • Supply Voltage
    50 V
  • Voltage - Drain-Source (Vdss)
    50 V
  • Voltage - Gate-Source (Vgs)
    -15 V
  • Drain Efficiency
    0.65
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    1.1 to 1.35 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -55 to 125 Degree C
  • Note
    Forward Gate Current : 365 mA, Reverse Gate Current : -9 mA

Technical Documents
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