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SGN2731-500H-R

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SGN2731-500H-R Image

The SGN2731-500H-R from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 2.7 to 3.1 GHz, Power 56.81 to 57.4 dBm, Power(W) 480 to 550 W, Power Gain (Gp) 11.8 to 12.4 dB, VSWR 10.00:1. Tags: Flanged. More details for SGN2731-500H-R can be seen below.

Product Specifications

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Product Details

  • Part Number
    SGN2731-500H-R
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaN on SiC, GaN HEMT from 2.7 to 3.1 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar, Wireless Infrastructure
  • Application Type
    S Band, Radar
  • Application
    S Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    2.7 to 3.1 GHz
  • Power
    56.81 to 57.4 dBm
  • Power(W)
    480 to 550 W
  • Pulsed Width
    120 usec
  • Power Gain (Gp)
    11.8 to 12.4 dB
  • VSWR
    10.00:1
  • Supply Voltage
    50 V
  • Voltage - Drain-Source (Vdss)
    50 V
  • Voltage - Gate-Source (Vgs)
    -15 V
  • Drain Efficiency
    0.57
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.55 to 0.70 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -55 to 125 Degree C
  • Note
    Gain Flatness : 0.5 to 1 dB, Forward Gate Current : 731 mA, Reverse Gate Current : -18 mA

Technical Documents
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