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SGN31E030MK

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The SGN31E030MK from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 3.1 GHz, Power 44 to 46 dBm, Power(W) 25.12 to 39.81 W, Gain 13 to 15 dB, Supply Voltage 50 V. Tags: Flanged. More details for SGN31E030MK can be seen below.

Product Specifications

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Product Details

  • Part Number
    SGN31E030MK
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaN on SiC, GaN HEMT from 3.1 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar, Wireless Infrastructure
  • Application Type
    S Band, Radar
  • Application
    S Band, Radar
  • CW/Pulse
    CW
  • Frequency
    3.1 GHz
  • Power
    44 to 46 dBm
  • Power(W)
    25.12 to 39.81 W
  • Gain
    13 to 15 dB
  • Supply Voltage
    50 V
  • Voltage - Drain-Source (Vdss)
    50 V
  • Voltage - Gate-Source (Vgs)
    -15 V
  • Drain Efficiency
    0.4
  • Thermal Resistance
    2 to 2.4 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -55 to 125 Degree C
  • Note
    Gain Flatness : 0.6 to 1.3 dB, Forward Gate Current : 39 mA, Reverse Gate Current : -2.2 mA

Technical Documents
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