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SGNE070MK

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The SGNE070MK from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 900 MHz, Power 48.5 to 49.5 dBm, Power(W) 70.79 to 89.1 W, Saturated Power 48.5 to 49.5 dBm, Gain 19 to 21 dB. Tags: Flanged. More details for SGNE070MK can be seen below.

Product Specifications

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Product Details

  • Part Number
    SGNE070MK
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaN on SiC, GaN HEMT from 900 MHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Type
    L-Band, General Purpose
  • Application
    L Band, General Purpose
  • CW/Pulse
    CW
  • Frequency
    900 MHz
  • Power
    48.5 to 49.5 dBm
  • Power(W)
    70.79 to 89.1 W
  • Saturated Power
    48.5 to 49.5 dBm
  • Gain
    19 to 21 dB
  • Power Added Effeciency
    0.7
  • Supply Voltage
    50 V
  • Voltage - Drain-Source (Vdss)
    50 V
  • Voltage - Gate-Source (Vgs)
    -15 V
  • Power Dissipation (Pdiss)
    118.5 W
  • Thermal Resistance
    1.5 to 1.9 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Gain Flatness : 0.8 dB, Forward Gate Current : 94 mA, Reverse Gate Current : -5.4 mA

Technical Documents
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