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The CHKA011aSXA from UMS is a GaN Transistor that operates up to 1.5 GHz in Pulsed and CW modes. It provides 150 watts of saturated output power (25µs, 10% duty cycle) with an efficiency of 75%. It is available in a flanged metal-ceramic package and is ideal for radar and telecommunication applications. This product is manufactured using a 0.5µm gate length GaN HEMT process and requires an external matching network.
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
300 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz
400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz
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