CHZ9012-QFA

Note : Your request will be directed to United Monolithic Semiconductors.

The CHZ9012-QFA from United Monolithic Semiconductors is a RF Transistor with Frequency 2.7 to 3.4 GHz, Power 48.13 dBm, Power(W) 65.01 W, Saturated Power 65 W, Duty_Cycle 10 to 30%. Tags: Surface Mount. More details for CHZ9012-QFA can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    CHZ9012-QFA
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    65 W, GaN HEMT Transistor form 2.7 to 3.4 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar, Military, Commercial, Wireless Infrastructure
  • Application
    General Purpose, 5G, Cellular, Radar
  • CW/Pulse
    CW, Pulse
  • Frequency
    2.7 to 3.4 GHz
  • Power
    48.13 dBm
  • Power(W)
    65.01 W
  • Saturated Power
    65 W
  • Pulsed Width
    3 ms
  • Duty_Cycle
    10 to 30%
  • Gain
    16 dB
  • Power Added Effeciency
    50 to 55%
  • Supply Voltage
    50 V
  • Drain Current
    4000 mA
  • Junction Temperature (Tj)
    230 Degree C
  • Package Type
    Surface Mount
  • Dimension
    8 x 8 mm
  • RoHS
    Yes
  • Grade
    Commercial
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents