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WP28010060

RF Transistor by WAVEPIA Co,. Ltd. (86 more products)
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The WP28010060 from WAVEPIA Co,. Ltd. is a RF Transistor with Frequency DC to 10 GHz, Power 47.78 dBm, Power(W) 59.98 W, Saturated Power 60 W, Small Signal Gain 10 to 13 dB. Tags: Die. More details for WP28010060 can be seen below.

Product Specifications

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Product Details

  • Part Number
    WP28010060
  • Manufacturer
    WAVEPIA Co,. Ltd.
  • Description
    60 W, GaN HEMT Transistor from DC to 10 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar, Wireless Infrastructure
  • Application Type
    WiMAX, LTE, WCDMA, GSM, Base Station, Communication, Drone, UAV, WPT, 5G, V2X
  • Application
    Cellular, Radar
  • CW/Pulse
    CW
  • Frequency
    DC to 10 GHz
  • Power
    47.78 dBm
  • Power(W)
    59.98 W
  • Saturated Power
    60 W
  • Small Signal Gain
    10 to 13 dB
  • Power Gain (Gp)
    13 dB
  • Transconductance
    340 mS/mm
  • VSWR
    10.00:1
  • Supply Voltage
    28 V
  • Threshold Voltage
    -3.2 V
  • Breakdown Voltage
    100 V
  • Drain Efficiency
    0.4
  • Drain Current
    1000 to 1050 mA/mm
  • Quiescent Drain Current
    200 mA
  • IMD
    -30 dBc
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Die
  • Dimension
    3763 x 965 um
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Drain Source Current :1000 to 1050 mA/mm, Ohmic contact resistance : 0.4 Ohms

Technical Documents
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