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WP281P43060MH(S)

RF Transistor by WAVEPIA Co,. Ltd. (86 more products)
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The WP281P43060MH(S) from WAVEPIA Co,. Ltd. is a RF Transistor with Frequency 1.38 to 1.48 GHz, Power 47.8 dBm, Power(W) 60.26 W, Saturated Power 60 W, Duty_Cycle 10%. Tags: Flanged. More details for WP281P43060MH(S) can be seen below.

Product Specifications

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Product Details

  • Part Number
    WP281P43060MH(S)
  • Manufacturer
    WAVEPIA Co,. Ltd.
  • Description
    60 W, GaN HEMT Transistor from 1.38 to 1.48 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Test & Measurement, Radar, Wireless Infrastructure
  • Application
    Cellular, Radar
  • CW/Pulse
    Pulse
  • Frequency
    1.38 to 1.48 GHz
  • Power
    47.8 dBm
  • Power(W)
    60.26 W
  • Saturated Power
    60 W
  • Pulsed Width
    0.1 mS
  • Duty_Cycle
    10%
  • Gain
    18.5 dB
  • Small Signal Gain
    18.5 dB
  • Power Added Effeciency
    68%
  • Supply Voltage
    28 V
  • Threshold Voltage
    -3.1 V (Gate)
  • Breakdown Voltage
    160 V
  • Voltage - Drain-Source (Vdss)
    160 V
  • Voltage - Gate-Source (Vgs)
    -10 to 2 V
  • Drain Efficiency
    0.68
  • Drain Current
    1000 mA (Saturated)
  • Quiescent Drain Current
    130 mA
  • Package Type
    Flanged
  • Package
    680B
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Gate Quiescent Voltage : '-2.45 V,Pulse Drain Efficiency : 36%

Technical Documents
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