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WP483P5200MH

RF Transistor by WAVEPIA Co,. Ltd. (86 more products)
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The WP483P5200MH from WAVEPIA Co,. Ltd. is a RF Transistor with Frequency 3.5 to 3.6 GHz, Power 50.3 dBm, Power(W) 107 W, Saturated Power 190 W, Duty_Cycle 10%. Tags: Flanged. More details for WP483P5200MH can be seen below.

Product Specifications

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Product Details

  • Part Number
    WP483P5200MH
  • Manufacturer
    WAVEPIA Co,. Ltd.
  • Description
    107 W, GaN HEMT Transistor from 3.5 to 3.6 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure, Test & Measurement, Radar
  • Application Type
    WiMAX, LTE, WCDMA, GSM
  • Application
    Cellular, Radar
  • CW/Pulse
    CW, Pulse
  • Frequency
    3.5 to 3.6 GHz
  • Power
    50.3 dBm
  • Power(W)
    107 W
  • Saturated Power
    190 W
  • Pulsed Width
    0.1 mS
  • Duty_Cycle
    10%
  • Small Signal Gain
    11.2 dB
  • Power Gain (Gp)
    9.74 dB
  • Power Added Effeciency
    57.30%
  • VSWR
    10.00:1
  • Supply Voltage
    48 V
  • Threshold Voltage
    -3.1 V (Gate)
  • Breakdown Voltage
    160 V
  • Voltage - Drain-Source (Vdss)
    160 V
  • Voltage - Gate-Source (Vgs)
    -10 to 2 V
  • Drain Efficiency
    0.5729
  • Drain Current
    1000 mA (Saturated)
  • Quiescent Drain Current
    250 mA
  • Package Type
    Flanged
  • Package
    680B
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Gate Quiescent Voltage : '-2.78 V,Pulse Drain Efficiency : 57.3%

Technical Documents
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