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WG027031200I

RF Transistor by WAVICE (32 more products)
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The WG027031200I from WAVICE is a RF Transistor with Frequency 2.7 to 3.1 GHz, Power 53.01 dBm, Power(W) 199.99 W, Saturated Power 200 W, Power Gain (Gp) 9 dB. Tags: Flanged. More details for WG027031200I can be seen below.

Product Specifications

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Product Details

  • Part Number
    WG027031200I
  • Manufacturer
    WAVICE
  • Description
    200 W, GaN on SiC Power Transistor from 2.7 to 3.1 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar, Wireless Infrastructure
  • Application Type
    Radar System
  • Application
    Radar
  • CW/Pulse
    CW
  • Frequency
    2.7 to 3.1 GHz
  • Power
    53.01 dBm
  • Power(W)
    199.99 W
  • Saturated Power
    200 W
  • Power Gain (Gp)
    9 dB
  • Power Added Effeciency
    58%
  • Supply Voltage
    36 V
  • Package Type
    Flanged
  • Grade
    Commercial
View details on the manufacturer's website
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