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WGB02504060F

RF Transistor by WAVICE (32 more products)
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The WGB02504060F from WAVICE is a RF Transistor with Frequency 2.5 to 4 GHz, Power 47.78 dBm, Power(W) 59.98 W, Saturated Power 60 W, Power Gain (Gp) 9 dB. Tags: Flanged. More details for WGB02504060F can be seen below.

Product Specifications

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Product Details

  • Part Number
    WGB02504060F
  • Manufacturer
    WAVICE
  • Description
    60 W, GaN on SiC Power Transistor from 2.5 to 4 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Aerospace & Defence, Wireless Infrastructure
  • Application
    Electronic Warfare
  • CW/Pulse
    CW
  • Frequency
    2.5 to 4 GHz
  • Power
    47.78 dBm
  • Power(W)
    59.98 W
  • Saturated Power
    60 W
  • Power Gain (Gp)
    9 dB
  • Supply Voltage
    50 V
  • Package Type
    Flanged
  • Grade
    Commercial, Military
View details on the manufacturer's website
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