BGS12P2L6

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BGS12P2L6 Image

The BGS12P2L6 from Infineon is a General Purpose SPDT Switch that operates from 0.05 to 6 GHz. It has an insertion loss of 0.2 dB and provides isolation of more than 45 dB. This RF CMOS switch can handle power up to 37 dBm and requires a supply voltage of 1.65-3.4V. It is manufactured using Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally.

This Antenna Switch is available in a Leadless and halogen-free package (TSLP-6-4) with a lateral size of 0.7 mm x 1.1 mm and a thickness of 0.31 mm. It is ideal for multi-mode LTE, GSM, and WCDMA applications.

Product Specifications

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Product Details

  • Part Number
    BGS12P2L6
  • Manufacturer
    Infineon Technologies
  • Description
    CMOS SPDT Antenna Switch for High Power Applications

General Parameters

  • Type
    Solid State
  • Configuration
    SPDT
  • Termination
    Absorptive
  • Application
    4G/LTE, 5G, 4G/LTE, 3G/WCDMA
  • Application Industry
    Cellular
  • Frequency
    0.05 to 6 GHz
  • Insertion Loss
    0.20 to 0.74 dB
  • Isolation
    24 to 54 dB
  • Power
    37 dBm
  • Power
    5.01 W
  • IIP3
    71 to 74 dBm
  • Supply Voltage
    1.65 to 3.4 V
  • Supply Current
    65 to 110 uA
  • Control Voltage
    -0.3 to 1.35 V
  • Switching Speed
    1.5 to 2.5 us
  • Control
    TTL
  • Impedance
    50 Ohms
  • VSWR
    1.0:1
  • Package Type
    Surface Mount
  • Package
    TSLP-6-4
  • Dimension
    0.7 x 1.1 x 0.31 mm
  • Technology
    GaAs, CMOS
  • Operating Temperature
    -55 to 150 Degree C
  • Storage Temperature
    -40 to 85 Degree C
  • RoHS
    Yes
  • Note
    IIP2 : 124 to 130 dBm

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