The BGSX22G2A10 from Infineon is a DPDT RF CMOS switch specifically designed for LTE and WCDMA triple antenna applications. The switch operates from 0.1 to 6.0 GHz and offers a low insertion loss and low harmonic generation paired with high isolation between RF ports. It is controlled via a GPIO interface and requires a supply voltage from 2.3 V to 3.4 V. The switch features direct-connect-to-battery functionality and DC-free RF ports. Unlike GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is applied externally. It is available in a compact package that measures 1.15 x 1.55 x 0.6 mm.
The BGSX22G2A10 RF switch is manufactured in Infineon&rsquos patented CMOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness.
