The MASW-011111-DIE from MACOM is an SPDT PIN Diode Switch that operates from 80 to 100 GHz with an integrated bias circuit. It has an insertion loss of 0.8 dB, provides isolation of 25 dB, and has a switching speed of 20 ns. The device is fully passivated with silicon nitride and has an additional layer of BCB for scratch protection. This protective coating prevents damage to the circuit during automated or manual handling.
The switch is manufactured using the AlGaAs PIN Diode MMIC process on a semi-insulating GaAs substrate. Each RF port contains DC blocking capacitors and a DC bias circuit consisting of high impedance lines and RF radial stubs. This device has gold plated bonding pads at all RF and DC ports. RF and DC ground backside gold plating allow for conventional chip bonding techniques using 80Au/20Sn solder, Indalloy solder, or electrically conductive silver epoxy. It is available as die that measures 1.33 x 1.055 x 0.1 mm and is suitable for satellite communications, millimeter-wave radar, and 94 GHz imaging in astronomy, defense, and security applications.
