RF PIN Diodes - Page 11

286 RF PIN Diodes from 9 Manufacturers meet your specification.
Description:Hermetic Ceramic Packaged Silicon PIN Diode Devices with 200 mA of forward current
Configuration:
Single Diode
Frequency:
100 MHz to 20 GHz
No. of Diodes:
1
Forward Current:
200 mA
Reverse Voltage:
50 V
Reverse Current:
10 uA
Capacitance:
0.3 to 0.35 pF
Package Type:
Ceramic
more info
Description:Silicon Limiter PIN Diode Up to 18 GHz
Forward Current:
10 to 40 mA
Reverse Current:
10 uA
Capacitance:
0.3 to 0.35 pF
Package Type:
Surface Mount
more info
BAP64-04W Image
Description:Silicon PIN diode with 100 mA of forward current
Configuration:
In Series
Frequency:
Up to 3 GHz
No. of Diodes:
2
Forward Voltage:
0.95 to 1.1 V
Forward Current:
100 mA
Reverse Voltage:
100 V
Reverse Current:
1 to 10 uA
Capacitance:
0.23 to 0.52 pF
Power Dissipation:
240 mW
Package Type:
Surface Mount
more info
Description:Silicon PIN Diode with 100 mA of forward current
Configuration:
In Series
Frequency:
Up to 3 GHz
No. of Diodes:
2
Forward Voltage:
0.95 to 1.2 V
Forward Current:
100 mA
Reverse Voltage:
50 V
Reverse Current:
0.01 uA
Capacitance:
0.21 to 0.3 pF
Power Dissipation:
250 mW
Package Type:
Flatpack
more info
RN141G Image
Description:1 to 100 MHz PIN Diode with 100 mA of forward current
Configuration:
Single Diode
Frequency:
1 to 100 MHz
No. of Diodes:
1
Forward Voltage:
1 V
Forward Current:
100 mA
Reverse Voltage:
50 V
Reverse Current:
0.1 uA
Capacitance:
0.8 pF
Package Type:
Surface Mount
more info
Description:0.07 pF Fast Switching Low Power Pin Diode
Reverse Voltage:
100 V
Capacitance:
0.07 pF
Package Type:
Chip
more info
Description:Switch and Attenuator Plastic-Packaged PIN Diode
Configuration:
Single Diode
No. of Diodes:
1
Forward Voltage:
0.8 V
Reverse Voltage:
200 V
Reverse Current:
10 uA
Capacitance:
0.3 pF
Power Dissipation:
250 mW
Package Type:
Surface Mount
more info
Description:Silicon Dioxide Passivated Chip PIN Diode
Forward Current:
10 to 200 mA
Reverse Current:
10 uA to 200 mA
Capacitance:
0.05 pF
Package Type:
Chip
more info
BAP64Q Image
Description:Quad PIN diode attenuator with 100 mA of forward current
Configuration:
Shunt
Frequency:
300 kHz to 4 GHz
No. of Diodes:
4
Forward Voltage:
0.95 to 1.1 V
Forward Current:
100 mA
Reverse Voltage:
100 V
Reverse Current:
1 to 10 uA
Capacitance:
0.23 to 0.52 pF
Power Dissipation:
125 mW
Package Type:
Surface Mount
more info
Description:Silicon PIN Diodes with 100 mA of forward current
Configuration:
In Series
Frequency:
Up to 3 GHz
No. of Diodes:
2
Forward Voltage:
0.95 to 1.2 V
Forward Current:
100 mA
Reverse Voltage:
50 V
Reverse Current:
0.01 uA
Capacitance:
0.21 to 0.3 pF
Power Dissipation:
250 mW
Package Type:
Flatpack
more info

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