RF PIN Diodes - Page 15

286 RF PIN Diodes from 9 Manufacturers meet your specification.
BAP70Q Image
Description:Quad PIN diode attenuator with 100 mA of forward current
Configuration:
Shunt
Frequency:
300 kHz to 4 GHz
No. of Diodes:
4
Forward Voltage:
0.95 to 1.1 V
Forward Current:
100 mA
Reverse Voltage:
50 V
Reverse Current:
0.1 uA
Capacitance:
250 to 600 pF
Power Dissipation:
125 mW
Package Type:
Surface Mount
more info
Description:Silicon PIN Diode with 100 mA of forward current
Configuration:
Common Cathode
Frequency:
Up to 3 GHz
No. of Diodes:
2
Forward Voltage:
0.95 to 1.2 V
Forward Current:
100 mA
Reverse Voltage:
50 V
Reverse Current:
0.01 uA
Capacitance:
0.21 to 0.3 pF
Power Dissipation:
250 mW
Package Type:
Flatpack
more info
Description:0.07 pF Fast Switching Low Power Pin Diode
Reverse Voltage:
200 V
Capacitance:
0.07 pF
Package Type:
Chip
more info
Description:Silicon PIN Diode Bondable Chips Silicon PIN Diode Bondable Chips Devices with 200 mA of forward current
Configuration:
Single Diode
Frequency:
100 MHz to 30 GHz
No. of Diodes:
1
Forward Current:
200 mA
Reverse Voltage:
200 V
Reverse Current:
10 uA
Capacitance:
0.2 to 0.25 pF
Package Type:
Chip
more info
Description:Common Anode PIN Diode from 100 MHz to 12 GHz
Configuration:
Common Anode
Reverse Current:
10 uA
Package Type:
Chip
more info
BAP50-05 Image
Description:General purpose PIN diode with 50 mA of forward current
Configuration:
Common Cathode
No. of Diodes:
2
Forward Voltage:
0.95 to 1.1 V
Forward Current:
50 mA
Reverse Voltage:
50 V
Reverse Current:
0.1 uA
Capacitance:
0.3 to 0.6 pF
Power Dissipation:
250 mW
Package Type:
Surface Mount
more info
Description:Silicon PIN Diode with 140 mA of forward current
Configuration:
In Series
Frequency:
10 MHz
No. of Diodes:
2
Forward Voltage:
1.05 to 1.25 V
Forward Current:
140 mA
Reverse Voltage:
100 V
Reverse Current:
0.1 to 1 uA
Capacitance:
0.2 to 0.5 pF
Power Dissipation:
250 mW
Package Type:
Flatpack
more info
Description:0.10 pF Fast Switching Low Power Pin Diode
Reverse Voltage:
200 V
Capacitance:
0.10 pF
Package Type:
Chip
more info
Description:Hermetic Ceramic Packaged Silicon PIN Diode Devices with 200 mA of forward current
Configuration:
Single Diode
Frequency:
100 MHz to 20 GHz
No. of Diodes:
1
Forward Current:
200 mA
Reverse Voltage:
200 V
Reverse Current:
10 uA
Capacitance:
0.40 to 0.50 pF
Package Type:
Ceramic
more info
Description:Common Cathode PIN Diode from 100 MHz to 12 GHz
Configuration:
Common Cathode
Reverse Current:
10 uA
Package Type:
Chip
more info

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