Top RF & Microwave Amplifiers of 2018

10,000 Watt Solid State Power Amplifier from 0.5 to 1 GHz

The AMP2131P from Exodus Advanced Communications is a rack mounted Class AB LDMOS Amplifier that operates from 0.5 to 1 GHz. This amplifier provides a pulsed output power of more than 10,000 watts with a power gain of over 70 dB. It has harmonics of -20 dBc and spurious of -60 dBc. The amplifier has built in control, monitoring and protection circuits and has been developed for use in rugged environments. It is suitable for high power - P-band pulse applications and has an instantaneous wide bandwidth. Click here to view specs.

Ultra-Wideband Monolithic Amplifier from 0.01 to 12 GHz

The GVA-123+ from Mini-Circuits is a wideband amplifier fabricated using GaAs HBT technology that operates from 0.01 to 12 GHz. It has a gain of 16.9 dB with 0.7 dB flatness and a return loss of 20 dB. The amplifier is available in a SOT-89 package and is matched to 50 ohms. It can be used for base station infrastructure, test instruments, LTE, satellite communication applications. Click here to view specs.

200 W Pulsed GaN Power Amplifier from 8.2 to 9.5 GHz

The DM-X200-04 from Diamond Microwave is a compact pulsed X-band GaN SSPA that operates from 8.2 to 9.5 GHz. It provides peak pulsed output power of more than 200 W (+53 dBm) over a 1300 MHz bandwidth, operating with pulse widths up to 100 µs and with duty cycles up to 15%. The SSPA has built-in phase control to optimize power combining and is a compact alternative to vacuum tube amplifiers (TWT) in demanding defence, aerospace and communications applications. It is available in as a slimline module that measures 150 mm x 197 mm x 30 mm with N-type output connectors (a waveguide interface can be offered as an option). The design is flexible in layout and architecture and can be tailored to meet individual specifications and enclosure requirements. Click here to view specs.

Low Noise Amplifier Series from 0.1 to 40 GHz

The LNA Series from L3 Narda-MITEQ consist of over 300 low noise amplifiers that are available in multiple frequency configurations that operate up to 40 GHz (UHF to Ka-band). These LNA's are available with power levels of 10 dBm, 15 dBm, 20 dBm and 25 dBm. These LNA's can be used for a wide range of commercial and military applications. They are available in modules with connector options based on the selected frequency or applications. Click here to view specs.

DC - 12 GHz Cascadable Broadband GaAs MMIC Amplifier, Packaged

The NBB-310 from Qorvo is a RF Amplifier with Frequency DC to 12 GHz, Gain 12.5 dB, Noise Figure 4.9 dB, P1dB 15 dBm, P1dB 0.032 W. Tags: Surface Mount, Power Amplifier, Gain Block, Driver Amplifier. More details for NBB-310 can be seen below. Click here to view specs.

10 Watt GaN Power Amplifier from 0.01 to 2.8 GHz

The HMC8500PM5E is a GaN Power Amplifier that operates from 0.01 to 2.8 GHz. It provides 10 Watts (40 dBm) of power with a gain of 15 dB and 55% power added efficiency (PAE). The HMC8500PM5E is available in a 5 x 5 mm compact LFCSP package and is ideal for pulsed or continuous wave (CW) applications, such as wireless infrastructure, radars, public mobile radios, and general-purpose amplification. Click here to view specs.

GaN Based High Power Pulsed Pallet Amplifier from 960 to 1215 MHz

The IGNP0912L1KW from Integra Technologies is a GaN high power pulsed pallet amplifier that operates from 960 MHz to 1215 MHz. It is matched to 50 ohms and supplies a minimum of 1000 watts of peak pulse power under the conditions of 2.5ms pulse width and 20% duty cycle. It provides a gain of over 14 dB with an efficiency of more than 55%. This amplifier requires a 50 V supply and is ideal for L- Band avionics systems. Click here to view specs.

30 Watt, GaN SSPA from 6 to 18 GHz

The SSPA 6.0-18.0-30 from Aethercomm is a high power, multi octave bandwidth, GaN solid state power amplifier that operates from 6 to 18 GHz. The amplifier provides 30 watts of saturated power to the load with a gain of 50 dB. It can be used in any high power system where a good level of efficiency is required a cross a wide frequency band. There is a PA Enable Command that is used to gate the PA on and off. The SSPA can be turned on in 40 uSec and turned off in 10 uSec. A logic high turns the PA On. Click here to view specs.

Low Noise Amplifier from 0.1 to 26.5 GHz

The APT4-00102650-4008-D4 from AmpliTech is a Low Noise Amplifier that operates from 0.1 to 26.5 GHz. It provides an output power of 10 dBm and gain of 24 dB with a noise figure of 2.8 dB. The amplifier requires a supply of 15 Vdc while consuming 90 mA of current. It is available in a drop-in package with SMA female connectors and is ideal for SATCOM, radar, microwave radio systems and test equipment applications. Click here to view specs.

200 Watt Pulsed LDMOS Power Amplifier for RF Energy Applications

The BPC10M6X2S200 from Ampleon is an LDMOS-based power amplifier module for use in a variety of plasma lighting, industrial heating, medical and RF cooking and defrosting applications. It provides 200 watts of pulsed RF power from 423 to 443 MHz and is available in a compact light weigh pallet that measures just 125 x 33 mm. It has a high efficiency of 74% which helps keep the cooling requirements to a minimum, and its 2-stage high gain characteristic of 38 dB further eases design-in into the end-application, requiring less input signal to achieve 200 Watt at the output. Click here to view specs.

80 W GaN MMIC Power Amplifier from 2.7 to 3.5 GHz

The CMPA2735075D from Wolfspeed is a GaN MMIC power amplifier that operates from 2.7 to 3.5 GHz. This transistor provides an output power of 80 Watts with a gain 28 dB and efficiency over 48%. It requires a supply voltage of 28 Volts and has high breakdown voltage. This transistor is available as a bare die that measures 0.197 x 0.174 x 0.004 inches and is ideal for civil and military pulsed radar amplifier applications. Click here to view specs.

10 Watt GaN Amplifier MMIC from 37 to 43 GHz

The CGY2651UH/C1 from OMMIC is a GaN Power Amplifier that operates from 37 to 43 GHz in the K-Band. This GaN MMIC amplifier provides an output power of 40 dBm with a 30% PAE @ its saturated output power. This amplifier requires a 12 V supply and is ideal for Radar,
Telecommunication and Space applications. It is also well positioned for 5G Applications in the 39 GHz Band. Click here to view specs.

100 Watt Solid State High Power Amplifier from 20 MHz to 6 GHz

The 2198 from Empower RF is a tri-band amplifier housed in a single chassis and is suitable for high bandwidth, high power CW, modulated, and pulse applications. The amplifier system consists of three amplifiers: One from 20 MHz to 1000 MHz that provides 100 watts of power, another operates from 1000 to 3000 MHz and provides 100 watts of power and the third from 2000 to 6000 MHz and provides 40 watts of power. It is available with user selectable modes for Automatic Level Control (ALC) and Manual Gain Control (MGC). Click here to view specs.

50 Watt CW, Solid State Power Amplifier from 10 kHz to 1 GHz

The 50U1000 from AR RF/Microwave Instrumentation is a portable, self-contained, air-cooled, solid-state power amplifier that operates from 10 kHz to 1000 MHz. It delivers over 50 watts of CW output power with a gain of more than 47 dB and a noise figure of less than 8 dB. It is available as a benchtop unit with N-type female connectors and has a digital front panel display that indicates the operation status and fault conditions if an over-temperature or power supply fault has occurred. The unit can also be rack mounted after removing the cabinet. This amplifier has built-in IEEE-488 (GPIB), RS-232, USB & Ethernet interfaces. It also has a safety interlock circuit for use with external safety switch interlocks. This circuit prevents the amplifier from going into operate mode unless the external connection is made. A jumper plug is provided for cases where this functionality is not needed. Click here to view specs.

Low Noise Amplifier from 18 to 42 GHz

The SBL-1834232840-KFKF-E3 from Sage Millimeter is a low noise amplifier that operates from 18 to 42 GHz. This LNA provides a gain of 28 dB with a noise figure of 4 dB. It requires a +12 VDC supply while drawing 240 mA of current. It is available in a module with K Type - Female connectors at the input and output (other connector options are also available). Click here to view specs.

10 W Power Amplifier Module from 6 to 18 GHz

The KB60180M40A from KeyLink Microwave is a multi-octave high power amplifier that operates from 6 to 18 GHz. This GaN amplifier provides a saturated output power of 10 Watts with a gain of 40 dB. It is available in a module that measures 150 x 90 x 25 mm with SMA female connectors and is ideal for for jamming, EMC, test and measurement applications. The amplifier is matched to 50 ohms at the input/output and has built-in control and protection circuits. Click here to view specs.

Ka-band GaN-HEMT MMIC for Satellite Earth Stations

The MGFG5H3001 from Mitsubishi Electric is a Ka-band (26 to 40 GHz) GaN HEMT MMIC amplifier for satellite earth stations. It provides a gain of 15 dB with an output power of 8 W. The chip integrates transistors circuits, matching circuits and a distortion-reducing linearizer. The built-in linearizer achieves low distortion for the power transmitters. Click here to view specs.

Low Noise Amplifier from 700 MHz to 6 GHz

The MAAL-011078 is a Low Noise Amplifier from MACOM that operates from 700 MHz to 6 GHz. It has a gain of over 22 dB and a noise figure of less than 0.5 dB at 2.6 GHz. The LNA requires a supply voltage of 3 V or 5 V. The bias current is set by an external resistor, so the user can customize the power consumption to fit the application. It is ideal for wireless infrastructure, WiFi, L Band and S Band applications. TheMAAL-011078 is available in a compact 2 mm PDFN package. Click here to view specs.

Multimode Multiband Power Amplifier Module

The SKY77643-11 is a hybrid multimode multiband (MMMB) power amplifier that supports 3G/4G handsets and operates efficiently in WCDMA, TD-SCDMA, and LTE modes. It consists of a WCDMA / LTE block for low, high, and mid-bands, and a Multi-Function Control (MFC) block with input/output ports internally matched to 50 Ohms. The module supports WCDMA, HSDPA, HSUPA and TD-SCDMA modulation for 3G and supports 1.4, 3, 5, 10, 15 and 20 MHz channel bandwidths for 4G. The output power of the amplifier can be controlled by varying the input power and voltage supplied to the amplifier. It is available in a 4.0 x 6.8 x 0.8 mm, 42-pad MCM, SMT package. Click here to view specs.

Bandpass Filter

Lowpass Filter

Highpass Filter

Band Reject Filter

Diplexer

Triplexer

Flexible

Attenuators

Bends

Circulators

Directional Couplers

Isolators

Phase Shifter

Rotary Joints

Straights

Termination

Transitions

Waveguide to Coax Adapters

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Top RF & Microwave Amplifiers of 2018