New Crystal Structure from Fujitsu Triples the Output Power of GaN Transistors
A newly developed crystal structure has proven to triple the output power of GaN transistors. It increases current and voltage in GaN high electron mobility transistors (HEMT) effectively tripling the output power of transistors used for transmitters in the microwave band.
The GaN HEMT technology, developed jointly by Fujitsu Ltd and Fujitsu Laboratories, can be used in power amplifiers for equipment such as weather radars - by applying the developed technology to this area, it is expected that the observation range of the radar will be expanded by 2.3 times, enabling early detection of cumulonimbus clouds that can develop into torrential rainstorms. To expand the observation range of equipment like radars, it is essential to increase the output power of the transistors used in power amplifiers. With conventional technology, however, applying high voltage could easily damage the crystals that form a transistor. Therefore, it was technically difficult to increase current and voltage simultaneously, which then led to the adoption of high-output power GaN HEMTs. Click here to read more.