Toshiba Launches New SOI Process Optimized for RF Switches
Toshiba’s Semiconductor & Storage Products Company has announced the development of TaRF8, a next generation SOI (Silicon on Insulator) process optimized for RF switch applications. This TarfSOI™ (Toshiba advanced RF SOI) process can develop switches with extreamly low insertion losses.
An SP12T RFIC switch has been developed on this process. The transmit switch IC has an integrated RF Frontend controller for mobile applications making it ideal for the 3GPP GSM, UMTS, W-CDMA, LTE and LTE-Advanced standards. This new switch will start in January 2016.read more