Industry's First Wafer-level Heterogeneous Integration of GaAs on Silicon for RF FEM Manufacturing
EV Group (EVG), a supplier of wafer bonding and lithography equipment, has partnered with Ningbo Semiconductor International Corporation (NSI), a specialty semiconductor foundry based in Ningbo, China, for the development of industry's first process technology platform for wafer-level heterogeneous integration of gallium arsenide (GaAs) on silicon for use in RF front-end module (FEM) manufacturing. This marks an important milestone in the development of next-generation, high-performance, ultra-compact RF front-end chipsets that are needed for 4G and 5G smartphones and other handsets.
As part of this strategic collaborative effort, EVG provided NSI with its leading temporary bonding/debonding (TB/DB), permanent bonding, mask alignment lithography, and related special metrology equipment and process expertise, which NSI leveraged together with its proprietary Micro Wafer-Level System Integration (uWLSI) technology platform to produce the innovative RF FEM products for a leading RF front-end devices and system solution provider. NSI is a joint venture subsidiary of Semiconductor Manufacturing International Corporation (SMIC) with China IC Investment Fund, Ningbo Economic Development Zone Industrial Investment Company, Ltd. and other IC investment funds. Click here to read more.