Ampleon's LDMOS and GaN RF Pas

Ampleon recognizes accurate modeling of RF components as being essential for technology development, as well as for design of advanced RF power products. In addition to using models internally, Ampleon provides models of its complete products to customers in order to support them in development of their own applications. This presentation describes how Ampleon’s modeling flow is organized and how the accuracy of its models is verified. The flow begins with on-wafer characterization, followed by component model extraction. In the case of FET devices, the Ampleon proprietary models, SPEAR for laterally diffused metal-oxide semiconductor field-effect transistor (LDMOS) and GEAR for gallium nitride (GaN) technology, are used. At the product design phase, the package and bond wires are modeled using an EM simulator. As soon as the accuracy is confirmed with wideband S-parameter data and load-pull contours, product models are prepared for publishing and uploaded to the company website.