5 GHz Transistors Provide Low Noise, Low Current and Low Cost
High Frequency Electronics, California Eastern Laboratories
Following the recent introduction of the world’s first 5 GHz NPN Silicon Germanium (SiGe) transistors, NEC has now added two new versions to the series. These low noise and high associated gain devices combine the performance advantages of GaAs with the cost advantages of silicon, for use as LNA devices in WLAN, cordless phones, and short-range wireless applications.
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