mmTron has developed its first single-chip front-end IC for mmWave communications for FWA, 5G and SATCOM applications. The TMC252 operates from 24 to 30 GHz and consists of a power amplifier (PA), low noise amplifier (LNA), and transmit-receive (T/R) switch on a single GaN IC that is available as a die or packaged in a 5 mm x 5 mm air-cavity QFN.
The TMC252 can be used for fixed wireless access, 5G infrastructure, point-to-point radio, and satellite communications. Its broadband performance covers several FR2, radio, and SATCOM bands.
Performance Characteristics
Tx Performance
In transmit mode, at 27 GHz, the TMC252 provides 38 dBm of saturated output power, 37 dBm of output power at 1 dB compression (OP1dB), and 42 dBm OIP3. At saturated output, the power-added efficiency (PAE) is 22% and the small-signal gain is 22 dB. The IC is biased at 23 V on the drain and –3.8 V on the gate while maintaining a quiescent current of 590 mA.
Rx Performance
In receive mode, at 27 GHz, the TMC252 provides 19 dB of gain with a 5 dB noise figure. The output power at 1 dB compression is 25 dBm and OIP3 is 29 dBm. The recommended drain bias is also 23 V, and the current drain is 60 mA with –4.5 V on the gate.
Tx/Rx Switching
The SPDT (Single pole, double throw) GaN switch routes the transmit signal from the PA to a common port, typically connected to an antenna, or the receive signal from the common port to the LNA. It is switched with 0 or 23 V; no negative voltage is required to control the switch.
The TMC252 is available as a die (designated TMC252D) which measures 3 mm x 3 mm x 0.1 mm. It is also available packaged in a 5 mm x 5 mm air-cavity QFN.
Click here to learn more about TMC252 Single-Chip RFIC.
