Sumitomo Electric Industries, a leading provider of advanced RF, wireless and optical communications solutions, has introduced a series of new devices in its line of high power GaN products for C-band and X-band radar applications at the on-going IMS 2017 event, from 6-8 June, 2017 in Honolulu, Hawaii.
GaN is a proven and reliable technology for radar applications. Today’s radars provide larger detection area and improved early detection, all while reducing size and weight. The GaN technology provides very high power and bandwidth, improving overall performance.
Key features of the C-Band product:
- High Output Power: Psat = 350 W (Typ.)
- High Gain: GP=12.8 dB (Typ.)
- High Power Added Efficiency: 53% (Typ.)
- Frequency Band: 5.2 to 5.9 GHz
- Impedance Matched Zin / Zout = 50ohm
- Hermetically Sealed Package
Key Features of the X-band ES/SGC0910-300A-R:
- High Output Power: Psat=340W (Typ.)
- High Gain: GP=9.3dB (Typ.)
- High Power Added Efficiency: 38% (Typ.)
- Frequency Band: 9.2 to 10.2GHz
- Impedance Matched Zin/Zout = 50ohm
- Hermetically Sealed Package
Key Features of the X-band SGM6901VU:
- High Output Power: Psat=34W (Typ.)
- High Gain: GP=23.3dB (Typ.)
- Frequency Band: 8.5 to 10.1GHz
- Impedance Matched Zin/Zout = 50ohm
- 2-Stage, Hybrid Module in Hermetically Sealed SMT Package
Stop by their booth to learn more. Click here to see complete coverage of IMS 2017 on everything RF.
