At IMS 2018, Qorvo has released high-performance, X-band front end modules (FEMs) designed for use in next-generation active electronically scanned array (AESA) radar. The new Qorvo FEMs – the QPM2637 and QPM1002 – are built on the company’s innovative GaN technology, which enables higher efficiency, reliability, power and survivability, as well as savings in size, weight and cost. These export-compliant gallium nitride (GaN) products also meet the need for high RF power survivability essential for mission-critical operations.
The demand for RF front end components for radar applications is expected to exceed $1 billion by 2022, growing at 9% CAGR over the next five years. The market for RF GaN devices for defense applications such as radar, electronic warfare and communications is projected to grow at 24% CAGR over the next five years, as the adoption rate of GaN significantly outpaces other technology choices.
The GaN FEMs provide four functions in a single compact package, including an RF switch, power amplifier, low noise amplifier and limiter. They can withstand up to 4W of input power on the receive side without permanent damage, compared with a typical gallium arsenide (GaAs) low noise amplifier, which can be damaged by less than 100mW of input power.
These new products - which are EAR99 export compliant - are now sampling to qualified customers.
Qorvo is showcasing its leading portfolio of advanced RF solutions at IMS 2018 from June 12-15, in Booth 725, at the Pennsylvania Convention Center.
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