At IMS 2019, INTEGRA, will be showcasing a new GaN-on-SiC high power transistor in Boston, Massachusetts from 4 to 6 June. As a supplier of GaN-on-SiC RF power transistors to the world’s premier radar system OEMs in Aerospace and Defense, Weather Radar, Air Traffic Control, Avionics (IFF, SSR, DME, TACAN), Data Links, Electronic Warfare, and Industrial, Scientific, and Medical (ISM) markets Integra has a large product range of Transistors.
The IGT1112M90 has been designed to suit the unique needs of X-Band Radar Systems. It operates over the full bandwidth of 10.8-11.8 GHz. Under 150µs, 10% duty cycle pulse conditions, it supplies a minimum of 90 W of peak output power, with an associated 9 dB of gain and 35% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.
Key Features:
• GaN on SiC HEMT Technology
• Output Power >90 W
• Fully matched to 50 W Impedance at both Input and Output
• High Efficiency - up to 43%
• 100% RF Tested
• RoHS and REACH Compliant
Applications: X-band Radar Systems
Learn more about INTEGRA’s high power GaN-on-SiC RF power transistor.
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