WIN Semiconductors has expanded its GaN portfolio with the release of a new process for emerging mmWave power amplifier (PA) applications including radar, satellite communications and 5G massive MIMO infrastructure. The NP15-00 uses 0.15μm-gate technology and supports full MMICs enabling WIN customers to design compact, linear or saturated high power amplifiers through 35 GHz.
The NP15-00 GaN technology employs a source-coupled field plate for improved breakdown voltage, and operates at a drain bias of 20 volts. This technology is fabricated on 100mm silicon carbide substrates with through-wafer vias for low inductance grounding. In the 29 GHz band, the NP15-00 offers saturated output power of 3 watts/mm with 13 dB linear gain and greater than 50% efficiency without harmonic tuning.
According to David Danzilio, Senior Vice President of WIN Semiconductors, the release of NP15 expands WIN's portfolio of mmWave compound semiconductor technologies for transmit power amplifiers used in 5G mmWave radio access networks, satellite communications and radar systems. For mmWave active arrays, the higher transmit power and efficiency from NP15 affords designers greater flexibility to optimize antenna count, PA size and total array power. Depending on where deployed, mmWave RAN infrastructure will leverage access points of various sizes, shapes and power levels, and a broad trade-space is crucial to optimize the performance and economics of mmWave active antenna systems.
The NP15-00 sample kits are available and can be obtained by contacting WIN's regional sales managers. The company is also showcasing its compound semiconductor RF and mm-Wave solutions in booth 772 at the 2019 IEEE MTT International Microwave Symposium in Boston, Massachusetts being held June from 2-7, 2019.
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