Cree has introduced a new family of high power GaN RF transistors based on an innovative plastic package design, which leverages the superior RF performance of GaN in a low-cost platform. Initial products include the industry’s first 300W plastic packaged transistor operating at 2.7 GHz, delivering unparalleled Psat efficiency of 65 percent and broadband capability at nearly half the price of the same GaN transistor housed in an industry-standard ceramic package. Available at power levels of 60, 100, 150, 200 and 300 watts, the new plastic GaN HEMT RF transistors can operate at frequencies up to 3.8 GHz. In addition, the family offers transistors pre-matched to cellular bands at either 690 – 960 MHz, 1800 – 2300 MHz or 2300 – 2700 MHz. Cree® GaN plastic packaged transistors used in Doherty amplifiers have demonstrated 80W average power at 2.6 GHz with 50 percent drain efficiency under 7.5dB PAR LTE signals at 50V, with 17dB of gain at rated output power. The entire family of 50V plastic GaN transistors is verified to meet moisture sensitivity level (MSL-3) and JEDEC environmental standards.
The market for RF transistors in wireless telecom infrastructure is approaching $1 billion annually (According to ABI Reseach). Silicon LDMOS has been the dominant technology for the past 20 years but recently GaN RF power devices have captured meaningful market share based on performance; however, acceptance has been limited thus far due to its higher cost. With technological advancements and plastic packaging the cost of GaN Transistors is nearing Si LDMOS levels.
The new GaN transistors will enable the deployment of smaller, lower-cost macrocell radio units capable of supporting the growing data demands of today’s cellular LTE networks. They have the flexibility to operate across multiple cellular bands, helping network operators deploy carrier aggregation solutions that join different bands of spectrum and create larger data pipes to support faster download speeds and enable additional network capacity. Cellular base station OEMs can also leverage this flexibility to speed their time to market by addressing market requirements with fewer band-specific amplifiers.
Additionally, Cree’s proven GaN technology provides unrivaled efficiency that improves a system’s thermal design and reduces cost. More efficient solutions allow for smaller and lighter radio units, which alleviates loading on already overcrowded cellular towers. Increased efficiency also creates significant savings on utility costs necessary to run the networks.
Visit Cree at booth (#433) at the International Microwave Symposium, June 1 – 6 in Tampa Bay, Florida.
