Qorvo, a leading provider of innovative RF solutions that connect the world, has developed a 20 W GaN-on-SiC power amplifier (PA) that is designed for defense and commercial satellite applications, including low earth orbit constellations. Qorvo's QPA1724 amplifier operates from 17.3 to 21.2 GHz (Ku-K Band) and offers twice the power of competing PAs, along with excellent wideband linear power, gain and power added efficiency in a compact surface mount package. The market-leading QPA1724 is optimized for wide bandwidth multi-carrier high data throughput satellite applications.
Mr. Dean White, Senior Director of Defense and Aerospace Market Strategy at Qorvo, said, “Qorvo is a pioneer in developing high performance millimeter wave solutions for satellite communication systems. The QPA1724 is a breakthrough device for both commercial and defense markets. At 20W saturated power, the QPA1724 offers twice the power of alternative PAs and leads the market in RF performance.”
Key Features of this Amplifier
- Frequency Range: 17.3 - 21.2 GHz
- PSAT (PIN = 27 dBm): 43 dBm
- PAE (PIN = 29 dBm): 27%
- Small Signal Gain: 25 dB
- Bias: VD = 20 V
- Dimensions: 7.5 x 6 x 1.6 mm
The company offers the industry’s largest, most innovative GaN-on-SiC portfolio to help customers realize superior efficiency and operational bandwidth. The company’s GaN-on-SiC products deliver high power density, reduced size, excellent gain, high reliability and process maturity. Qorvo is a leading supplier of RF products and compound semiconductor foundry services to the defense industry and has achieved a Manufacturing Readiness Level 10 (MRL 10) rating with the U.S. Department of Defense for its GaN technology.
The QPA1724 is available now and is lead-free, RoHS compliant and 100% DC and RF tested to ensure compliance with electrical specifications.
Click here to learn more about this GaN-on-SiC Amplifier from Qorvo.
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Click here to read a new article by Qorvo - The RF Pol: A Special Breed of Point-of-Load Converters.
