MACOM to Demonstrate its GaN Portfolio at IMS 2015

MACOM IMS

M/A-COM Technology Solutions will showcase their Gallium Nitride (GaN) RF product portfolio at IMS 2015 in Phoenix, Arizona from May 19-21. At booth #2839 M/A-COM will feature its new, revolutionary Gen 4 GaN on Silicon product solutions optimized for commercial, industrial, scientific and medical applications. Stop by booth #2839 to learn how MACOM’s GaN portfolio can solve unique application design challenges. They will be showcasing the following:

  • Gen4 GaN on Silicon: State of the art GaN process optimized for linearity.
  • GaN Integrated Amplifier Demo: MACOM’s GaN on Silicon integrated amplifier family demo will feature input matched, broadband, integrated amplifiers operating over multi-octave bandwidths, showcasing the ease of use of these products for a variety of commercial, industrial, defense and ISM applications including wireless power.
  • S-Band Pallet Demonstration: High-performance, compact, S-Band GaN on Silicon Carbide pallet for Air Traffic Control Radar applications.
  • E-Band Amplifier Module: The industry’s first E-band SMD modules, delivering performance needed for tomorrow’s high capacity, high modulation, cellular backhaul radios. This demo will showcase the output power, spectrum, and spectral mask conformance of an E-band radio containing the new MACOM E-Band TX SMD module.
  • MACOM LNA Demonstration: See MACOM’s XL1010-QT, a versatile Low Noise Amplifier in a Police Radar Detector application.

Multifunction Phased Array Panel: Come see MACOM’s Static Multifunction Phased Array Panel (MPAR) that supports today’s challenging civil and military radar applications.

Members of MACOM’s product management, engineering and applications teams will be available at IMS to answer any inquiries or questions. They will also be participating in various sessions throughout IMS, including:

Workshops

Current Trends in GaN Packaging - High Power Plastic Packaging with GaN

Date: Sunday, May 17, 2015

Time: 1 PM – 5 PM (Half Day)


Technical Sessions

AlGaN/GaN HEMT Nonlinear Model Fitting Including a Trap Model

Date: Wednesday, May 20th, 2015

Time: 2:50 PM

Location: Room 132ABC


Interactive Forums

Active Bias Control for Improved Pulse Droop Performance of GaN HEMT Transistor

Date: Thursday, May 21, 2015

Time: 1:00 PM

Location: Hall 6


A 120 Watt GaN Power Amplifier MMIC Utilizing Harmonic Tuning Circuits For S-band

Applications Date: Thursday, May 21, 2015

Time: 1:00 PM

Location: Hall 6


Microapps

Simple LNA Solutions for Radio and Wireless Applications

Date: Wednesday, May 20, 2015

Time: 3:30 – 3:45 PM

Location: Microapps pavilion show floor

Publisher: everything RF
Tags:-   GaN

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