RFHIC has introduced a series of asymmetrical Doherty gallium nitride (GaN) SiC HEMTs designed for high-power wireless communication systems and general-purpose amplification applications. The series consists of four transistors with an operating frequency range from 1,805 MHz to 2,690 MHz with saturated output powers over 275 Watts and drain efficiencies up to 60%. RFHIC’s 275WD series is built using RFHIC’s state-of-the-art GaN SiC technology providing reduced electric power consumption, compact base station designs, and excellent heat dissipation.
Designed as asymmetric Doherty high electron mobility transistors, the 275WD series is built in thermally enhanced dual package types, minimizing external components and overall system sizes. They are internally matched and packaged in a compact earless flange-type package that measures 15.3 x 5.5 x 4.25 (L x W x H, cm).
The 275WD Family Consists of the following products:
ID18275WD: 1,805 ~ 1,880 MHz, 50W Average Power, 56% efficiency at 48V
RFHIC’s ID18275WD is an asymmetrical Doherty gallium nitride (GaN) SiC HEMT designed for 4G LTE multi-standard cellular power amplification applications. The ID18275WD operates from 1805 to 1880 MHz and delivers a saturated output power of 331W at 48V with a drain efficiency of 56% at 47dBm. This GaN HEMT transistor is built in a thermally enhanced dual package type minimizing external components and overall system size. RFHIC’s ID18275WD is internally matched and is packaged in an earless flange type that measures 15.3 x 5.5 x 4.25 (L x W x H) mm. View product details.
ID26275WD: 2,620 ~ 2,690 MHz, 50W Average Power, 53% efficiency at 48V
RFHIC’s ID26275WD is an asymmetrical Doherty gallium nitride (GaN) SiC HEMT designed for various wireless communications applications such as WiMAX, 4G LTE, WCDMA, multi-carrier and more. The ID26275WD operates from 2620 to 2690 MHz and delivers a saturated output power of 316W at 48V with a drain efficiency of 50% at 47.3dBm. This GaN HEMT transistor is built in a thermally enhanced dual package type minimizing external components and overall system size. RFHIC’s ID26275WD is internally matched and is packaged in an earless flange type that measures 15.3 x 5.5 x 4.25 (L x W x H) mm. View product details.
ID20275WD: 1,880 ~ 2,025 MHz, 40W Average Power, 50% efficiency at 48V
RFHIC’s ID20275WD is an asymmetrical Doherty gallium nitride (GaN) SiC HEMT designed for various wireless communications applications such as WiMAX, 4G LTE, WCDMA, multi-carrier and more. The ID20275WD operates from 1880 to 2025 MHz and delivers a saturated output power of 282W at 48V with a drain efficiency of 53% at 46.8dBm. This GaN HEMT transistor is built in a thermally enhanced dual package type minimizing external components and overall system size. RFHIC’s ID20275WD is internally matched and is packaged in an earless flange type that measures 15.3 x 5.5 x 4.25 (L x W x H) mm. View product details.
ID25275WD: 2,520 ~ 2,630 MHz, 54W Average Power, 50% efficiency at 48V
RFHIC’s ID25275WD is an asymmetrical Doherty gallium nitride (GaN) SiC HEMT designed for various wireless communications applications such as WiMAX, 4G LTE, WCDMA, multi-carrier and more. The ID25275WD operates from 2520 to 2630 MHz and delivers a saturated output power of 316W at 48V with a drain efficiency of 50% at 46dBm. This GaN HEMT transistor is built in a thermally enhanced dual package type minimizing external components and overall system size. RFHIC’s ID25275WD is internally matched and is packaged in an earless flange type that measures 15.3 x 5.5 x 4.25 (L x W x H) mm. View product details.
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