M/A-COM Technology has announced that it has shipped more than one million GaN-on-Silicon (GaN on Si) RF power devices to date to customers for use in communications, military and other RF applications. This milestone in the market adoption of this high performance technology comes as GaN on Si is finding new potential markets in applications such as magnetron replacements, automotive ignition systems, high bay lighting and wireless charging.
MACOM’s GaN on Si is a unique and proprietary RF semiconductor process that brings together the best features of Gallium Arsenide, GaN-on-Silicon Carbide, and LDMOS in a low cost and scalable manufacturing flow. This milestone demonstrates clear field-proven reliability and ruggedness in demanding applications such as Aerospace and Defense and civil and commercial communications.
Their GaN IP portfolio and strategic licensing agreements have set the foundation for a sustainable, cost-efficient technology which has started to hit economies of scale. Building on this milestone, MACOM plans to ramp commercial adoption of their GaN technology in other RF applications, including 4G/LTE base stations and RF Energy applications.
