At the European Microwave Week in Paris, Qorvo announced three new GaN RF transistors in low-cost plastic packages designed to enable smaller size and greater reliability in civilian marine, airborne and infrastructure radar systems. The TGF2977-SM, TGF2978-SM, and TGF2979-SM are unmatched GaN transistors designed to operate in the 8 to 12 GHz frequency band. Qorvo's GaN technology paired up with the small packaging enables high linear gain and power efficiency. These X-band power transistors will be available in fourth the quarter of calendar 2015.
Qorvo is expanding GaN in low cost QFN plastic packaging to include X-band transistors for marine and avionics radar. Radar manufacturers that are converting Magnetrons to solid state power amplifiers (SSPAs) and radar arrays can produce smaller, more efficient radar units as a result of GaN's size, weight and power efficiencies. These transistors also meet stringent heat and moisture stress testing to ensure that the products will operate in harsh environments.
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Part Number
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Frequency Range (GHz)
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Output Power (P3dB)
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Drain Efficiency (%)
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Linear Gain (dB)
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Packaging (mm)
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TGF2977-SM
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8 - 12
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37 dBm
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50
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12.5
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3x3 QFN
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TGF2978-SM
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8 - 12
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43 dBm
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45
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11
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3x3 QFN
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TGF2979-SM
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8 - 12
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44 dBm
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45
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11
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3x4 QFN
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Qorvo has these products on display at their Booth - C307 at European Microwave Week, in Paris from 8 to 11 September.
