Ampleon (Spin-off from NXP) has announced the extension of its portfolio of GaN RF power transistors based on a 0.5um HEMT process technology. Comprising 10 W, 30 W, 50 W and 100 W devices, over ten transistors are currently available suitable for multiple applications such as drivers up to C band, through to 100W and 200W push-pull packages for use in final stages up to S band. Housed in a compact and thermally stable ceramic package, the whole CLF1G family of devices are ideal for use in a broad range of applications that need to meet specific requirements of SWaP (size, weight and power).
With the adoption of GaN into markets beyond A&D, they foresee significant growth opportunities in the years to come. Optimized for best in class linearity, power efficiency, and broadband power performance, Ampleon’s GaN devices are available with electrical models, reference designs and demonstration boards. Typical applications include use in commercial aviation and radar applications, aerospace and defence systems, and broadband solutions.
Devices available include the CLF1G0035S-50, a broadband 50W amplifier capable of operation from DC through to 3.5 GHz that is designed for operation up to 50V and having excellent VSWR (ruggedness) capabilities of 10:1. 100W devices have just been released, and Ampleon are currently sampling other types for mass production during early 2016.
Being a European supplier, Ampleon is a so called ‘ITAR-free’ supplier, a factor that is appreciated by its customers in the worldwide A&D marketplace. ITAR (International Traffic in Arms Regulations) and the EAR (Export Administration Regulations) are export control regulations run by different departments of the US Government.
