High Efficiency LDMOS RF Transistor for Wideband Doherty Applications

BLF888E

Ampleon has launched the BLF888E - An RF power transistor designed for DVB-T UHF asymmetrical wideband Doherty amplifier applications. Fabricated in a SOT539 package using a sixth generation high voltage LDMOS process, the BLF888E has greater than 50% power efficiency, this being typically up to 10% more efficient compared to previous devices. With its high efficiency rating, the device helps reduce the energy consumption profile of the end-application. The average DVB-T power output is 150 Watt, representing typically a 25% increase in output power of previous devices making it one of the highest power levels available from a single transistor for such broadcast applications.

The characteristics of the BLF888E provide a typical 120 MHz bandwidth per sub-band compared to the industry norm of 40 – 50 MHz narrow bands for similar applications. The amplifiers have a 1:1.5 main/peak power ratio and are driven from a 50 VDC supply.

To aid development of asymmetrical wideband Doherty amplifiers for UHF DVB-T applications a set of three evaluation boards are available on request that cater for the 470 – 590 MHz, 580 – 690 MHz and 650 – 790 MHz sub-bands. These will enable customers to shorten the time-to-market for their UHF TV power amplifiers.

Publisher: everything RF
Tags:-   LDMOSCATV

Ampleon

  • Country: Netherlands
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