M/A-COM Technology Solutions Inc. today introduced its series of GaN in Plastic packaged power transistors for high-performance civilian and military radar and communications systems. Packaged in miniature 3 x 6 mm dual-flat no leads (DFN) and standard small outline transistor (SOT-89) packages, MACOM’s GaN in Plastic transistors operate at 50V drain bias resulting in outstanding power density and performance, higher efficiency, and smaller impedance matching circuits due to improved device parasitics. The high voltage operation also benefits overall system design with smaller energy storage capacitors and lower current draw. The power transistors leverage sophisticated thermal management techniques to ensure excellent reliability in surface mount applications. The 90W power transistor demonstrates less than 115°C junction temperature (80°C base-plate) for a pulsed power output of 93W, using a 1mS pulse and 10% duty cycle on standard Rogers board material. The devices can operate at even higher temperatures, as the calculated mean-time-to-failure (MTTF) at 200°C is roughly 600 years.
The table below outlines typical performance:
MAGX-000035-0900P: DC to 3.5 GHz Transistor with an output power of 95 W with an efficiency of 65% at 1 GHz and a duty cycle of 10%. It has a gain of 17.5 dB and is packaged in a 3 x 6 mm dual-flat no leads (DFN).
MAGX-000035-05000P: DC to 3.5 GHz Transistor with an output power of 50 W with an efficiency of 65% at 1 GHz and a duty cycle of 10%. It has a gain of 18 dB and is packaged in a 3 x 6 mm dual-flat no leads (DFN).
MAGX-000035-01500P: DC to 3.5 GHz Transistor with an output power of 17 W with an efficiency of 68% at 1 GHz and a duty cycle of 10%. It has a gain of 19.5 dB and is packaged in a 3 x 6 mm dual-flat no leads (DFN).
MAGX-000040-5000P: DC to 4 GHz Transistor with an output power of 5.3 W with an efficiency of 65% at 1 GHz and a duty cycle of 10%. It has a gain of 14 dB and is packaged in a standard small outline transistor (SOT-89) package.
These GaN in plastic transistors defy the power, size and weight limitations of competing ceramic packaged transistors that are currently offered for military and civilian radar systems.
The first entries in MACOM ’s GaN in Plastic power transistor product portfolio include 90W, 50W and 15W transistors, all of which are available in standard 3 x 6 mm DFN packaging. The devices can be mounted on PCBs via ground/thermal arrays. Internal stress buffers allow the devices to be reliably operated at up to 200°C channel temperature. The GaN in Plastic series also includes a 5W device in an even smaller SOT-89 package, measuring 2.5 x 4.5 mm. All of these transistors are capable of operating at frequencies up to at least 3.5 GHz.
“Radar system designers are challenged to reduce the size, weight, and cost of next generation system designs, while meeting new requirements of higher power, efficiency and reliability,” said Paul Beasly, MACOM, Product Manager. “MACOM’s GaN in Plastic packaging innovation and rich heritage of expert engineer-to-engineer customer support ensure that radar system designers are best equipped to harness the highest power in the smallest possible size.”
GaN in Plastic test fixtures are available upon request. Datasheets and additional product information can be obtained from MACOM’s GaN microsite at: www.macomtech.com/gan
