I2R Nanowave, a designer and manufacturer of advanced microwave, millimeter-wave and electro-optic components and sub-systems, has announced the release of the INW0240-31, a broadband GaN power amplifier module. Based on I2R Nanowave proprietary Gallium Nitride (GaN) technology, the amplifier exhibits over 1 Watt of saturated output power over the incredibly broad 2 to 40 GHz frequency range. Event though this amplifier was designed for high saturated power, it exhibits a harmonic suppression of better than 10 dB and intermodulation product suppression of 15 dB when operating at full power. The amplifier provides 26 dB of power gain in a compact design.
Based on I2R Nanowave's MHMIC technology, the module can be deployed in military and space environments. It is a three stage, GaN based high power amplifier well suited to Electronic Warfare applications. It is available in custom form-factors for integration into customer platforms.
Located in Macungie Pennsylvania, I2R Nanowave Inc. is a world-class designer and manufacturer of advanced microwave, millimeter-wave and electro-optic components and sub-systems for Radar, Communications, and Space Applications. Their systems maintain compliance to AS9100C and ISO9001:2008 and ITAR registration. Their facility encompasses all the core capabilities needed for end-to-end microwave electronic product development, redesign and life cycle maintenance. Click here to learn more about I2R Nanowave and their amplifiers.
