Qorvo has introduced a new asymmetric Doherty amplifier that enables customers to achieve ultra-high levels of power efficiency in the design of wireless base station equipment. The next-generation gallium nitride on silicon carbide (GaN-on-SiC) solution features two transistors in a single package to maximize linearity, efficiency and gain, and ultimately reduce operating costs.
GaN devices can handle more power than other high-frequency technologies like GaAs and InP, with better frequency performance characteristics than other power technologies like LDMOS.
Customers are increasingly moving to GaN-on-SiC in order to realize significant improvements in performance, linearity and efficiency for wireless base stations compared to LDMOS and GaN-on-Si, which have poor thermal characteristics. The QPD2731 addresses this shift with pre-matched, discrete GaN-on-SiC High Electron Mobility Transistors (HEMTs). The new amplifier, currently available for sampling, provides the highest performance available in its operating range of 2.5 to 2.7 GHz.
The QPD2731 is an asymmetric Doherty transistor that operates from 2.5 to 2.7 GHz. It delivers a peak doherty output power (P3dB) of 316 W with a drain efficiency of 60% and a gain of 16 dB. The amplifier requires a supply voltage of 48 V while consuming up to 220 mA of current. It is available in a NI-780 ceramic package and is ideal for avtive antennas, macro base station and wireless communication applications. The QPD2731 can be linearized by standard, commercially available, third-party DPD systems.
Qorvo offers a broad portfolio of GaN discrete transistor products with varying levels of power, voltage and frequency ratings, in both die-level and packaged solutions.
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