Wolfspeed has introduced a new series of 28 V GaN HEMT RF power devices. These new devices are capable of higher frequency operation up to 8 GHz with increased efficiency and higher gain as well as excellent reliability. RF design engineers are now able to build more efficient broadband power amplifiers for commercial and military wireless communications and radar applications.
The new 28 V GaN HEMT devices are developed using Wolfspeed’s proven 0.25 µm GaN-on-SiC process, and are designed with the same package footprint as the previous generation of 0.4 µm devices, making it possible for RF design engineers to use them as drop-in replacements for the earlier devices in existing designs. Available as both packaged devices (CG2H400 Series) and bare die (CG2H800 Series), the new GaN HEMTs deliver 33% higher frequency operation to 8 GHz (from 6 GHz), an additional 1.5 - 2.0 dB of gain, as well as a 5 - 10% boost in operating efficiency compared to Wolfspeed’s earlier generation devices.
The higher efficiency (up to 70% at PSAT) and higher bandwidth capability makes these devices ideal for an extensive range of RF power amplifier applications, including those for military communications systems, radar equipment (UHF, L-, S-, C-, and X-band), electronic warfare (EW) and electronic counter-measure (ECM) systems, as well as commercial RF applications in the industrial, medical, and scientific (ISM) band.
The CG2H400 Series include these packaged 28V unmatched GaN HEMT devices:
- CG2H40010 - 10 W, 8 GHz operation with 70% efficiency (at PSAT) and 18 dB/16 dB small signal gain (at 2.0 GHz and 4.0 GHz, respectively)
- CG2H40025 - 25 W, 6 GHz operation with 65% efficiency (at PSAT) and 17 dB/15 dB small signal gain (at 2.0 GHz and 4.0 GHz, respectively)
- CG2H40045 - 45 W, 4 GHz operation with 60% efficiency (at PSAT) and 18 dB/14 dB small signal gain (at 2.0 GHz and 4.0 GHz, respectively)
The CG2H400 Series devices are available in screw-down flanged or solder-down pill packages.
The CG2H800 Series include these bare die 28 V unmatched GaN HEMT devices:
- CG2H80015 - 15 W, 8 GHz operation with 65% efficiency (at PSAT) and 17 dB/12 dB small signal gain (at 4.0 GHz and 8.0 GHz, respectively)
- CG2H80030 - 30 W, 8 GHz operation with 65% efficiency (at PSAT) and 17 dB/12 dB small signal gain (at 4.0 GHz and 8.0 GHz, respectively)
- CG2H80060 - 60 W, 8 GHz operation with 65% efficiency (at PSAT) and 15 dB/12 dB small signal gain (at 4.0 GHz and 8.0 GHz, respectively)
Compared to conventional silicon (Si) and gallium arsenide (GaAs) devices, Wolfspeed’s GaN-on-SiC RF devices deliver higher breakdown voltage, higher temperature operation, higher efficiency, higher thermal conductivity, higher power density, and wider bandwidths, all of which are critical for achieving smaller, lighter, and more efficient microwave and RF products. Wolfspeed GaN-on-SiC RF devices enable next-generation broadband, public safety, and ISM (industrial, scientific, and medical) amplifiers; broadcast, satellite, and tactical communications amplifiers; UAV data links; cellular infrastructure; test instrumentation; and two-way private radios.
For more information about the newly released CG2H400 and CG2H800 devices, click here.
Attendees of European Microwave 2017 can learn more about these devices as well as the rest of Wolfspeed’s GaN RF portfolio by visiting them at booth #195.
