STMicroelectronics has signed an agreement on LDMOS RF power technology from Innogration Technologies, a fabless semiconductor company headquartered in Suzhou, China, specializing in the design and manufacturing of RF power semiconductor devices, modules, and sub-system assemblies.
Combining a short conduction-channel length with a high breakdown voltage, LDMOS devices are well suited for RF power amplifiers where they can be used in base stations for wireless communications systems, as well as in the power amplifiers for commercial and industrial systems. The agreement with Innogration expands the range of applications that ST can address with LDMOS technology.
Terms of the agreements were not disclosed. However it looks like Innogration Technologies will design and develop RF power devices based on LDMOS Technology using ST's Fab. Recently, STMicroelectronics signed an agreement with MACOM to develop a process for the GaN on Si technology. These partnerships will position STMicroelectronics very well as an important player in high power RF Devices.
